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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A TO220-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.65mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 113W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMT6004SCT is a 60V N-channel enhancement mode MOSFET in a TO-220AB package. It features a maximum drain-source on-resistance of 3.65mΩ at VGS=10V and ID=100A, with a continuous drain current rating of 100A at TC=+25°C. The device supports a pulsed drain current of 180A and an avalanche energy of 200mJ. Thermal resistance from junction to case is 1.1°C/W, while junction-to-ambient is 52.8°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Features low input capacitance and low leakage for efficient switching.
- Manufactured using lead-free finish and complies with RoHS directives.
- Includes 100% unclamped inductive switching (UIS) testing in production.
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix 'SCT' corresponds to the TO-220AB tube packaging configuration before procurement. Confirm that the component meets all applicable RoHS and halogen-free requirements as defined by the manufacturer's quality definitions. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for the intended operating environment.
Selection Notes
Select this component for high-efficiency power management applications requiring robust UIS reliability. Consider the TO-220AB through-hole package for designs necessitating direct board mounting or heatsink attachment. Evaluate the 60V breakdown voltage and 100A current capacity against peak load requirements to ensure adequate safety margins during operation.
Part Context
This part belongs to Diodes Incorporated's generation of N-channel enhancement mode MOSFETs designed for automotive and industrial use. It utilizes a trench technology structure to achieve low on-resistance and fast switching characteristics. The product is manufactured in IATF 16949 certified facilities for automotive-grade supply chain requirements.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified equivalent parts. Cross-reference pinouts, thermal characteristics, and electrical ratings when substituting components to maintain circuit integrity.
FAQ
What is the maximum avalanche energy rating?
The maximum avalanche energy (EAS) is rated at 200 mJ with an inductance of 0.2 mH.
Is the device suitable for automotive applications?
Yes, for automotive applications requiring specific change control, AEC-Q100/101/200 qualification, and PPAP capability, contact the manufacturer directly.
