DMT6005LFG-13

$0.31

Description：MOSFET N-CH 60V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9abbc7680943 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3150 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.98W (Ta), 62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Download product information

DMT6005LFG-13

Overview

The DMT6005LFG-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package. The device features a maximum drain-source breakdown voltage of 60V and a continuous drain current rating of 100A at a case temperature of +25°C. Static drain-source on-resistance is specified as 4.1mΩ max at VGS=10V, 6.3mΩ max at VGS=6V, and 7mΩ max at VGS=4.5V. Total gate charge is 48.7nC max at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features a small form factor thermally efficient package that occupies just 33% of the board area compared to SO-8 packages.
Includes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application reliability.

Applications

Synchronous rectification
Motor controls
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration. Confirm compliance with RoHS directives and Halogen/Antimony-free 'Green' device definitions during procurement. Ensure the component meets automotive quality standards if required for the target application environment.

Selection Notes

Select this component when low on-state losses are critical alongside high current handling capabilities in a compact footprint. Evaluate thermal requirements against the 63°C/W junction-to-ambient resistance for ambient cooling scenarios. Consider the 100A current limit limited by the package for high-power designs requiring case-level thermal management.

Part Context

This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for high-density power electronics where minimizing board space is essential. The PowerDI3333-8 package provides a balance between thermal dissipation and physical size constraints typical in modern consumer and industrial electronics.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers within the same family or equivalent specifications. Do not assume cross-compatibility with other manufacturers without validating pinout, electrical parameters, and thermal characteristics against the original datasheet.