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Product Detailed Parameters
- Description：MOSFET N-CH 60V 13.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2962 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT6005LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 13.5A at 25°C ambient temperature. The device exhibits a low on-state resistance of 6mΩ at VGS=10V and 8.9mΩ at VGS=4.5V. Total gate charge is 47.1nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SO-8 surface-mount package.
Feature Summary
- Designed for high conversion efficiency with minimized on-state losses
- Optimized for fast switching speed and low input capacitance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- High frequency switching circuits
- Synchronous rectification systems
- DC-DC converters
Procurement Notes
Verify the component against the official datasheet DS38291 Rev. 2-2 to confirm authenticity. Ensure the SO-8 package matches the specified dimensions and terminal finish. Check compliance documentation for RoHS and halogen-free status as defined by the manufacturer's green product standards before integration into production.
Selection Notes
Select this component when a 60V N-channel MOSFET with low RDS(ON) is required for power management applications. Consider the thermal resistance values and power dissipation limits relative to the PCB copper area and mounting conditions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching performance.
Part Context
This part belongs to the DMT6005LSS series from Diodes Incorporated. It is specifically engineered to balance low on-state resistance with superior switching performance. The SO-8 case utilizes a molded plastic compound with a matte tin annealed over copper leadframe finish, suitable for standard surface mount assembly processes.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters and physical package dimensions to ensure functional compatibility.
