DMT6009LSS-13

$0.82

Description：MOSFET N-CH 60V 10.8A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:01ea992c2c78 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 10.8A 8SO T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT6009LSS-13

Overview

The DMT6009LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 60 V and a gate-source voltage (V_GSS) rating of ±20 V. The device provides a continuous drain current (I_D) of 10.8 A at +25°C, with a maximum static drain-source on-resistance (R_DS(ON)) of 9.5 mΩ at V_GS = 10 V and 12 mΩ at V_GS = 4.5 V. Total gate charge (Q_g) is 33.5 nC at V_GS = 10 V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Features excellent Qgd x RDS(ON) product figure of merit for superior switching performance.
Includes 100% unclamped inductive switch (UIS) testing during production.

Applications

Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS 2 compliance standards and is halogen-free. Ensure the SO-8 package dimensions align with the recommended pad layout specified in application notes AP02001.

Selection Notes

Select this component when a 60 V N-channel MOSFET is required for low-loss DC-DC conversion or backlighting circuits. The SO-8 package offers a balance between thermal dissipation and board space. Evaluate the 9.5 mΩ R_DS(ON) specification against the target load current to ensure adequate efficiency under steady-state conditions.

Part Context

This part belongs to the DMT6009 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The 'LSS' designation indicates the specific SO-8 surface-mount case style. The '-13' suffix denotes the standard tape and reel packaging format used for automated assembly processes.

Replacement Considerations

Cross-reference other 60 V N-channel MOSFETs in an SO-8 package. Verify pinout compatibility and ensure replacement parts meet or exceed the 10.8 A continuous drain current and 9.5 mΩ on-resistance specifications.