DMT6010LFG-13

$0.79

Description：MOSFET N-CH 60V 13A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c5dccba10f3d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 41W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT6010LFG-13

Overview

The DMT6010LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 surface-mount package and operates with a drain-source voltage of 60V. The device provides a maximum continuous drain current of 30A at case temperature of +25°C, with an on-state resistance of 7.5mΩ at VGS=10V and 11.5mΩ at VGS=4.5V. Total gate charge is 41.3nC at VGS=10V. Thermal characteristics include a junction-to-case resistance of 3°C/W and a total power dissipation of 2.2W at ambient temperature of +25°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Small form factor thermally efficient package enables higher density end products and occupies significantly less board area than standard SO-8 packages.
Manufactured using totally lead-free materials that are fully RoHS compliant, halogen free, and antimony free.

Applications

Synchronous Rectifier
Backlighting
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS directives and material definitions against project specifications. Ensure the PowerDI3333-8 footprint matches the PCB layout design guidelines provided in the datasheet package outline section.

Selection Notes

Select this component when low on-state resistance and small physical footprint are critical for power management designs. Evaluate thermal performance based on the specified junction-to-case resistance and power dissipation limits under expected operating conditions. Consider the gate charge parameters for driving circuit compatibility in switching applications.

Part Context

This part belongs to the DMT60 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI family of surface-mount packages designed for improved thermal efficiency and reduced board space compared to traditional through-hole or larger surface-mount alternatives.

Replacement Considerations

DMT6010LFG-7 is a verified substitute offering identical electrical characteristics and package type, differing only in the tape and reel quantity of 2,000 units per reel.