DMT6012LFV-7

$0.22

Description：MOSFET N-CH 60V 43.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:57be6c733ce9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 43.3A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1522 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.95W (Ta), 33.78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT6012LFV-7

Overview

The DMT6012LFV-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) package. It features a drain-source voltage of 60 V and a continuous drain current of 43.3 A at TC = +25°C. The maximum on-resistance is 12 mΩ at VGS = 10V and 15 mΩ at VGS = 4.5V. Total power dissipation reaches 33.78 W at TC = +25°C. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high efficiency applications
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 packages
Features an ESD protected gate

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen and antimony free as specified in the manufacturer's documentation. Ensure the requested part number matches the exact electrical ratings and thermal characteristics required for the target application design.

Selection Notes

Select this component when low on-state resistance and small footprint are critical requirements. The device is suitable for designs needing robust switching performance within a compact PowerDI3333-8 case. Consider the thermal management capabilities provided by the exposed drain pad for effective heat dissipation in dense layouts.

Part Context

This MOSFET belongs to the DMT6012LFV series manufactured by Diodes Incorporated. It utilizes silicon technology and is designed specifically for high-efficiency power management tasks. The product summary highlights its capability to minimize on-state losses while maintaining reliable switching behavior in various electronic circuits.