DMT6013LSS-13

$0.17

Description：MOSFET N-CH 60V 10A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:633ea86bbb4e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 10A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1081 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT6013LSS-13

Overview

The DMT6013LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 10A at 25°C and 7.8A at 70°C, with a pulsed drain current capability of 60A. Static drain-source on-resistance is specified as 14.3mΩ max at VGS=10V and 21mΩ max at VGS=4.5V. Total gate charge is 15nC at VGS=10V. The component utilizes an SO-8 surface-mount package.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Manufactured with totally lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.
Features 100% unclamped inductive switching (UIS) testing in production to ensure robust end-application reliability.

Applications

High frequency switching
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS 3 and REACH status against current regulatory standards before finalizing procurement. Ensure the SO-8 package dimensions align with the target PCB footprint layout.

Selection Notes

Select this component when a 60V N-channel MOSFET with low on-resistance is required for compact designs. The SO-8 package offers a balance between thermal dissipation and board space constraints compared to smaller packages. Evaluate the 14.3mΩ RDS(ON) specification against system conduction loss requirements at the intended operating gate drive voltage.

Part Context

This part belongs to the DMT6013LSS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The product line focuses on silicon technology optimized for minimizing on-state resistance while maintaining fast switching speeds. The standard marking code for this device is T6013LS.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent part numbers. Cross-referencing requires matching critical parameters including 60V breakdown voltage, SO-8 package type, and comparable RDS(ON) specifications.