DMT6015LFV-13

$0.18

Description：MOSFET N-CH 60V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f01928fa6c8b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.9 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1103 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMT6015LFV-13

Overview

The DMT6015LFV is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 (Type UX) packaging and silicon technology. Key electrical parameters include a drain-source breakdown voltage of 60V, a maximum continuous drain current of 35A at TC=25°C, and a static drain-source on-resistance of 16mΩ max at VGS=10V. The device supports an operating temperature range from -55°C to +150°C.

Feature Summary

Low RDS(ON) minimizes on-state losses for high efficiency power management applications
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
Totally lead-free & fully RoHS compliant

Applications

Motor Control
DC-DC Converters
Power Management

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMT6015LFV-7 (2,000 units per tape and reel) and DMT6015LFV-13 (3,000 units per tape and reel). Confirm that the required quantity matches the standard factory packaging configuration available from authorized distributors.

Selection Notes

Select this component for designs requiring low on-resistance in a compact footprint. Ensure the gate drive voltage meets the specified thresholds for optimal conduction. Verify thermal management requirements against the junction-to-ambient resistance values provided in the datasheet for the intended PCB layout.

Part Context

This part belongs to the DMTH6016 series family, which includes similar 60V N-channel MOSFETs. It shares design goals with other members like DMT6010LFG-13 but differs in specific package dimensions and electrical characteristics tailored for different power density requirements within the same manufacturer portfolio.