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Product Detailed Parameters
- Description：MOSFET N-CH 60V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.9 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1103 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta), 30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMT6015LFV-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 9.5 A at ambient temperature or 35 A at case temperature. The device offers a low on-state resistance of 16 mΩ at VGS = 10 V and 22 mΩ at VGS = 4.5 V. Total gate charge reaches 18.9 nC at VGS = 10 V. Thermal characteristics include a junction-to-case resistance of 4.2 °C/W and power dissipation ratings of 2.2 W at Ta = +25°C and 30 W at Tc = +25°C.
Feature Summary
- Low on-state resistance minimizes conduction losses for high efficiency
- Thermally efficient small form factor package enables higher density designs
- Occupies significantly less board area compared to traditional SO-8 packages
Applications
- Motor control systems
- DC-DC converters
- Power management circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS, lead-free, halogen-free, and antimony-free requirements as specified by the manufacturer's green product definitions. Ensure compatibility with standard surface mount assembly processes.
Selection Notes
Select this component when a compact footprint is required alongside moderate current handling capabilities. Evaluate thermal performance based on the specific application's ambient versus case temperature constraints. Consider the gate threshold voltage and total gate charge values to ensure compatibility with the intended driver circuitry and switching frequency requirements.
Part Context
This part belongs to the DMT6015LFV series manufactured by Diodes Incorporated. It utilizes silicon technology within the PowerDI3333-8 (Type UX) case style. The device is designed for general-purpose switching applications requiring low on-resistance and superior thermal management in a minimal surface mount profile.
Replacement Considerations
DMT6015LFV-13 serves as an alternative packaging variant containing 3,000 units per tape and reel. Both variants share identical electrical specifications and physical dimensions.
