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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 31.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.7 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：808 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 28.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMT6015LFVW-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) Type UX package. It features a drain-source voltage of 60 V and a maximum on-resistance of 16 mΩ at VGS = 10 V. Continuous drain current reaches 31.8 A at TC = +25°C and 10.0 A at TA = +25°C. The device supports a total power dissipation of 2.8 W at TA = +25°C and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Small form factor thermally efficient package enables higher density end products
- Wettable flank design facilitates improved optical inspection
- 100% unclamped inductive switching (UIS) tested in production
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance standards and is halogen-free if required by the project specifications. Ensure the PowerDI3333-8 footprint matches the suggested pad layout provided in the datasheet to guarantee proper thermal and electrical performance during assembly.
Selection Notes
Select this component when a compact N-channel MOSFET with low RDS(ON) is required for space-constrained designs. The PowerDI3333-8 package offers superior thermal efficiency compared to standard SMD packages. Consider the 60 V rating and 31.8 A continuous current capability for applications requiring robust switching performance. Verify gate drive compatibility with the specified threshold voltage characteristics for optimal switching speeds.
Part Context
This part belongs to the DMT6015 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for use in high-efficiency power management applications where small form factors and thermal efficiency are critical design parameters.
Replacement Considerations
Consult the official Diodes Incorporated documentation for verified equivalent parts or direct replacements. Cross-referencing should be performed based on matching electrical parameters such as BVDSS, RDS(ON), and package dimensions to ensure functional compatibility without compromising circuit integrity.
