DMT6016LFDF-13

$0.15

Description：MOSFET N-CH 60V 8.9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:af7e648832b5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 8.9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：820mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT6016LFDF-13

Overview

The DMT6016LFDF-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a low on-state resistance (RDS(ON)) of 16mΩ at VGS=10V, or 27mΩ at VGS=4.5V. The device supports a continuous drain current of 8.9A at TA=+25°C with VGS=10V. It utilizes a U-DFN2020-6 package with a 0.6mm profile.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features a 0.6mm profile suitable for low-profile applications and includes a PCB footprint of 4mm².
Compliant with RoHS standards, totally lead-free, halogen-free, and antimony-free.

Applications

Load switches
Adaptor switches
Notebook PCs

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packing quantity as defined in the manufacturer's documentation. Confirm that the U-DFN2020-6 (Type F) package marking and date code requirements align with your assembly specifications. Ensure compliance with the specified moisture sensitivity level and soldering methods outlined in the datasheet.

Selection Notes

Select this component when a compact surface-mount solution is required for 60V logic-level switching applications. The low RDS(ON) values at both 10V and 4.5V gate voltages make it suitable for various drive conditions. Consider the thermal characteristics and package size constraints relative to the intended power dissipation requirements.

Part Context

This part belongs to the DMT6016LFDF series from Diodes Incorporated, representing a generation of MOSFETs optimized for minimizing on-state resistance without compromising switching speed. It is designed specifically for high-efficiency power management tasks within consumer electronics and portable devices.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-referencing requires matching BVDSS, RDS(ON), ID ratings, and package dimensions to ensure functional compatibility.