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Product Detailed Parameters
- Description：MOSFET N-CH 60V 8.9A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT6016LFDF-7 is a 60V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum on-resistance of 16mΩ at VGS=10V and 27mΩ at VGS=4.5V. Continuous drain current reaches 8.9A at TA=+25°C, with a pulsed current capability of 60A. The device has a total power dissipation of 0.82W at +25°C (minimum pad layout) or 1.9W (optimized copper plate). Thermal resistance to ambient is 153°C/W (steady state, min pad) or 66°C/W (optimized). Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- 100% Unclamped Inductive Switch (UIS) tested in production for robustness
- 0.6mm profile designed for low profile applications
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free "Green" device
Applications
- Load switches
- Adaptor switches
- Notebook PCs
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details. The -7 suffix indicates a 3000-piece reel size, while other suffixes may denote different quantities. Confirm that the required automotive qualification standards are met if intended for such environments, as standard parts may require specific change control protocols.
Selection Notes
Select this component when a compact 6-pin surface-mount solution is required for 60V switching applications. The U-DFN2020-6 footprint offers a small PCB area of 4mm². Ensure thermal management aligns with the specified power dissipation ratings based on the copper plane layout used in the final design.
Part Context
This part belongs to the DMT6016LFDF series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 (Type F) package with NiPdAu terminal finish over a copper leadframe. The device is moisture sensitivity rated Level 1 per J-STD-020.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing parameters such as RDS(ON), VDS, and package dimensions is essential for functional equivalence.
