DMT6016LPS-13

Overview

The DMT6016LPS-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a static drain-source on-resistance (RDS(ON)) of 15mΩ at VGS=10V and 24A, or 24mΩ at VGS=4.5V and 18A. Continuous drain current (ID) reaches 32A at TC=+25°C with VGS=10V. Pulsed drain current (IDM) is rated at 120A. Total power dissipation (PD) is 2.6W at TA=+25°C and 26W at TC=+25°C. Thermal resistance junction-to-ambient (RθJA) is 49°C/W steady state. Operating temperature range spans -55°C to +150°C.

Feature Summary

• Designed for high-efficiency power management applications with minimized on-state resistance and superior switching performance.
• Features a thermally efficient PowerDI5060-8 package with a profile under 1.1mm, suitable for thin applications.
• Includes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application reliability.
• Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

• Load switches
• Adaptor switches
• Notebook PCs

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard part number DMT6016LPS-13 comes in a Tape & Reel carrier with a packing quantity of 2,500 units. An alternative variant, DMT6016LPS-13/ SWP (Type UX), is also available in Tape & Reel packaging with the same quantity. Confirm the exact package type required for your assembly process before placing orders.

Selection Notes

Select this component for designs requiring a 60V N-channel MOSFET with low RDS(ON) to minimize conduction losses. The PowerDI5060-8 package provides a compact footprint ideal for space-constrained PCB layouts. Ensure thermal management strategies account for the specified thermal resistance values to maintain junction temperatures within the -55°C to +150°C operating range during continuous operation.

Part Context

This component belongs to the DMT6016LPS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device is designed to balance low on-resistance with fast switching speeds, targeting efficiency improvements in portable electronics and power supply circuits.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, match the 60V BVDSS, 15mΩ RDS(ON) at 10V VGS, and PowerDI5060-8 package dimensions. Verify that any replacement maintains comparable thermal characteristics and UIS capability if inductive loads are present.

FAQ

What is the maximum pulsed drain current for the DMT6016LPS?

The maximum pulsed drain current (IDM) is 120A, measured with a 10μs pulse duration and a 1% duty cycle.

Is the DMT6016LPS suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, PPAP capability, or manufacturing in IATF 16949 certified facilities, you must contact Diodes Incorporated directly.

What is the typical turn-on delay time?

The typical turn-on delay time (tD(ON)) is 3.4ns, measured at VGS=10V, VDS=30V, RG=6Ω, and ID=10A.