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Product Detailed Parameters
- Description：MOSFET N-CH 60V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：11.2A (Ta), 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.84W (Ta), 41.67W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMT6016LPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8 surface-mount packaging and operates with a drain-source voltage of 60V. The device features a maximum on-resistance of 16.5mΩ at VGS=10V and 26mΩ at VGS=4.5V, supporting continuous drain currents up to 43A at TC=+25°C. Key electrical parameters include a gate threshold voltage of 1V to 2.5V, total gate charge of 17nC at VGS=10V, and fast switching times with turn-on delay of 3.4ns and fall time of 7ns. Thermal resistance from junction to case is 3°C/W.
Feature Summary
- Designed for high conversion efficiency with minimized on-state losses
- Features wettable flanks to improve optical inspection reliability
- Undergoes 100% unclamped inductive switching testing in production
Applications
- Synchronous rectifier circuits
- Backlighting power supplies
- DC-DC converters
- General power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2 and RoHS 3 directives as well as halogen and antimony-free requirements. Ensure the application environment remains within the specified -55°C to +150°C operating temperature range to maintain rated performance.
Selection Notes
Select this component when low on-resistance and fast switching are required in a compact PowerDI5060-8 footprint. Consider the thermal resistance characteristics and package limitations for high-current applications. Evaluate the gate charge requirements against driver capabilities to ensure optimal switching performance.
Part Context
This part belongs to the DMT6016 series of N-channel MOSFETs from Diodes Incorporated. It is specifically engineered to balance low static conduction losses with dynamic switching speed. The PowerDI5060-8 package provides a robust solution for space-constrained designs requiring reliable thermal dissipation.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pin configurations, voltage ratings, and thermal specifications before implementation.
