DMT6017LFDF-13

$0.14

Description：MOSFET N-CH 65V 8.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:821b00ba40d4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 65V 8.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：8.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：891 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT6017LFDF-13

Overview

The DMT6017LFDF-13 is a 65V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an RDS(ON) of 18mΩ at VGS=10V and 23mΩ at VGS=4.5V, with continuous drain currents of 8.1A at TA=+25°C (VGS=10V) and 7.1A at VGS=4.5V. The device utilizes a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². It includes an internal ESD protected gate diode and supports a maximum junction temperature of +150°C.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for robustness
Low on-resistance combined with superior switching performance
ESD protected gate structure
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

DC-DC Converter
Adaptor Switch
Wireless Charging

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per reel quantity as defined in the manufacturer's ordering information. Confirm that the U-DFN2020-6 (Type F) package dimensions align with your PCB pad layout requirements. Ensure compliance with moisture sensitivity level 1 standards during storage and handling procedures.

Selection Notes

Select this component when low-profile surface mount packaging is required alongside high-efficiency power management needs. The device offers optimized thermal characteristics suitable for applications constrained by space. Evaluate the 18mΩ on-resistance against system efficiency targets under varying gate drive voltages.

Part Context

This part belongs to the DMT6017 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It represents a newer generation designed to minimize on-state resistance while maintaining switching performance. The series targets high-efficiency power management solutions requiring compact form factors.

Replacement Considerations

Consult official substitution lists or cross-reference tools provided by Diodes Incorporated for verified alternatives. Do not assume functional equivalence based solely on voltage and current ratings without verifying package compatibility and electrical parameters.