DMT6017LFDF-7

$0.14

Description：MOSFET N-CH 65V 8.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:67c24d81c759 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 65V 8.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：65 V
Current - Continuous Drain (Id) @ 25°C：8.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：891 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMT6017LFDF-7

Overview

The DMT6017LFDF-7 is a 65V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source voltage of 65V and continuous drain current ratings of 8.1A at +25°C and 6.5A at +70°C. The device offers low on-resistance, specified as 18mΩ max at VGS=10V and 23mΩ max at VGS=4.5V. It includes an internal gate protection diode and supports a junction temperature range from -55°C to +150°C.

Feature Summary

Features a 0.6mm profile suitable for low-profile applications
Includes 100% unclamped inductive switching (UIS) testing for reliability
Provides ESD protected gate functionality
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converter
Adaptor Switch
Wireless Charging

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per reel quantity configuration. Confirm that the U-DFN2020-6 (Type F) package dimensions match the required PCB footprint layout. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component for high-efficiency power management designs requiring low on-state resistance. Evaluate thermal performance based on the 157 °C/W junction-to-ambient resistance for standard FR-4 substrates. Consider the 65V breakdown voltage and 8.1A current capability against peak load requirements.

Part Context

This part belongs to the Diodes Incorporated DMT6017 series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a U-DFN2020-6 case material described as molded plastic green molding compound. The device is designed to minimize on-state resistance while maintaining superior switching performance.