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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 8.8A 8VDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：8.8A (Ta)
- Rds On (Max) @ Id, Vgs：17mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：869pF @ 30V
- Power - Max：1.9W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：V-DFN3030-8
- Grade：-
- Qualification：-
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Overview
The DMT6018LDR-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a V-DFN3030-8 (Type H) package. It features a drain-source voltage of 60V and a maximum continuous drain current of 8.8A at +25°C. The device exhibits low on-resistance, specified as 17mΩ max at VGS=10V and 26mΩ max at VGS=4.5V. Total gate charge is 13.9nC at VGS=10V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration with shared source terminals for simplified circuit design
- Optimized for low on-state resistance while maintaining superior switching performance
- Low input capacitance and fast switching speed suitable for high efficiency power management
- Totally lead-free and fully RoHS compliant construction
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging format when sourcing components. Confirm that the V-DFN3030-8 (Type H) case dimensions align with your PCB footprint requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling procedures during assembly.
Selection Notes
Select this component for applications requiring a compact dual MOSFET solution with low thermal resistance. The V-DFN3030-8 package offers efficient heat dissipation compared to standard small signal packages. Consider the 60V rating and 8.8A current capability for low-voltage DC-DC converter designs or load switch implementations where space is constrained.
Part Context
This part belongs to Diodes Incorporated's advanced generation MOSFET lineup designed to minimize RDS(ON). The DMT6018LDR variant specifically targets high-efficiency power management systems. It utilizes a molded plastic green molding compound with UL flammability classification rating 94V-0.
Replacement Considerations
Consult official manufacturer documentation for direct pin-to-pin replacements within the same series. Verify electrical parameters such as RDS(ON) and BVDSS match application requirements before substituting.
FAQ
What is the maximum continuous drain current for the DMT6018LDR?
The maximum continuous drain current is 8.8A at an ambient temperature of +25°C.
Does the DMT6018LDR have independent or shared sources?
The device features a dual N-channel configuration with shared source terminals (S1 and S2 are internally connected).
What is the total gate charge value at VGS=10V?
The total gate charge is 13.9nC when tested at VDS=30V, ID=8.2A, and VGS=10V.
