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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：215A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：130.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8306 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta), 139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (SWP)
- Package / Case：8-PowerTDFN
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Overview
The DMT61M5SPSW-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage of 60V and a continuous drain current of 215A at TC = +25°C. The device has a typical on-resistance of 1.1mΩ (max 1.5mΩ) at VGS = 10V and ID = 30A. Gate threshold voltage ranges from 2V to 4V. Total gate charge is typically 130.6nC. Operating temperature range is -55°C to +150°C.
Feature Summary
- Engineered for high conversion efficiency with minimized on-state losses
- Includes wettable flank design to improve optical inspection reliability
- Validated through 100% unclamped inductive switching testing in production
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets RoHS compliance standards and halogen-free requirements if mandated by project specifications. Ensure the manufacturer's marking code aligns with the expected date code format before finalizing procurement orders.
Selection Notes
Select this component when low on-resistance and robust switching performance are critical. Consider the thermal resistance characteristics and power dissipation limits relative to the intended heat sink or PCB layout. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching speeds.
Part Context
This part belongs to Diodes Incorporated's advanced N-channel MOSFET lineup designed for automotive and industrial applications. It utilizes the PowerDI5060-8 surface mount package, which provides enhanced thermal performance and mechanical stability compared to traditional packages.
Replacement Considerations
Consult official substitution lists for verified alternatives. Verify pinout compatibility and electrical parameter overlaps before considering any cross-reference parts.
