DMT61M8SPS-13

$0.65

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7551c0179590 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：205A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：130.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8306 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMT61M8SPS-13

Overview

The DMT61M8SPS-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 (Type K) package. It features a drain-source voltage of 60V and a maximum continuous drain current of 205A at TC = +25°C. The device exhibits a typical static drain-source on-resistance of 1.1mΩ, with a maximum of 1.6mΩ at VGS = 10V and ID = 30A. Total gate charge is typically 130.6nC at VDS = 30V and VGS = 10V. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Engineered for high conversion efficiency and minimized on-state losses through low RDS(ON).
Maintains superior switching performance with fast turn-on and turn-off speeds.
Manufactured with lead-free finish and complies with RoHS directives.
Halogen- and antimony-free green device construction.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q100/101/200 qualification requirements if intended for automotive applications requiring specific change control and PPAP capability. Ensure thermal management aligns with the specified junction-to-case resistance values.

Selection Notes

Select this component when a 60V rating is required alongside high current handling capabilities up to 205A. The low on-resistance minimizes conduction losses in power management circuits. Verify that the gate drive voltage supports the 10V threshold for optimal RDS(ON) performance. Consider the PowerDI5060-8 footprint constraints during PCB layout design.

Part Context

This part belongs to Diodes Incorporated's generation of N-channel enhancement mode MOSFETs designed to balance low on-resistance with robust switching characteristics. It utilizes the PowerDI5060-8 case style, which provides an exposed drain pad for efficient thermal dissipation to the substrate.