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The DMT63M6LPSW-13 is a single N-channel Power MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage (Vdss) range of 41V to 60V and supports a continuous drain current (Id) of up to 96A at 25°C case temperature. The device utilizes the PowerDI5060-8 package with wettable flanks for enhanced solder joint inspection. Key electrical characteristics include a low on-resistance (Rds(on)) optimized for high-efficiency switching, a gate charge (Qg) of approximately 17nC, and a threshold voltage (Vgs(th)) around 1V. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific Vdss variant (41V or 60V) required for your circuit design, as the part number covers a range. Confirm that the PowerDI5060-8 footprint matches your PCB layout, noting the wettable flank requirement for automated optical inspection compatibility. Ensure thermal management strategies account for the 96A rating at case temperature rather than ambient conditions.
Select this component when high current capacity is needed in a compact surface-mount form factor. The wettable flank technology facilitates quality control during assembly. Compare Rds(on) values against alternative packages to ensure thermal performance meets system requirements. Consider the gate charge specifications if driving speed is critical for the application's switching frequency.
This device belongs to Diodes Incorporated's PowerDI series, which focuses on compact, high-performance power solutions. The PowerDI5060-8 package is designed for applications demanding robust mechanical stability and thermal dissipation. The inclusion of wettable flanks distinguishes it from standard QFN packages by allowing visual verification of solder joints underneath the component body.
Check for direct substitutes such as DMTH63M6LPSWQ-13, ensuring pinout and electrical parameters match. Verify package compatibility before substitution.