DMT64M3SK3-13

$0.42

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f296142b69a1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：131A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：83 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6019 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 116W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMT64M3SK3-13

Overview

The DMT64M3SK3-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage (BVDSS) of 60V and a gate-source voltage rating of ±20V. The device provides a continuous drain current (ID) of 131A at TC = +25°C, with a pulsed drain current (IDM) capability of 524A. The static drain-source on-resistance (RDS(ON)) is specified as a maximum of 4.2mΩ at VGS = 10V and ID = 90A. Total power dissipation reaches 116W at TC = +25°C, supported by a thermal resistance from junction to case (RθJC) of 1.08°C/W.

Feature Summary

Ensures robust end-application reliability through 100% Unclamped Inductive Switching (UIS) testing during production.
Minimizes power losses via low RDS(ON) characteristics while maintaining superior switching performance.
Reduces switching losses through low total gate charge (QG) and fast switching speed capabilities.
Complies with RoHS directives and is halogen and antimony free.

Applications

Engine management systems
Body control electronics
DC-DC converters
Motor controls

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units per carrier. Confirm that the TO252 package dimensions align with the target PCB footprint layout. Ensure the selected component meets the necessary automotive quality standards if the application requires AEC-Q101 qualification or IATF 16949 manufacturing certification.

Selection Notes

Select this component for high-efficiency power-management applications requiring low conduction losses. Evaluate the thermal resistance parameters against the expected ambient temperature and heat sink configuration to ensure the junction temperature remains within the -55°C to +150°C operating range. Consider the gate threshold voltage specifications when designing the drive circuitry for optimal switching efficiency.

Part Context

This part belongs to the DMT64 series of N-channel enhancement mode MOSFETs designed by Diodes Incorporated. It utilizes a TO252 (DPAK) surface-mount package constructed with a molded plastic green molding compound. The device is intended for general-purpose switching applications where minimizing on-state resistance is critical for overall system efficiency.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching BVDSS, ID ratings, RDS(ON), and package type.