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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SO-8 T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：13.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2664 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMT64M8LSS-13 is a 60V N-channel enhancement mode MOSFET in an SO-8 package. It features a maximum on-resistance of 5mΩ at VGS=10V and 6.9mΩ at VGS=4.5V. Continuous drain current reaches 17.0A at TA=+25°C. The device includes gate protection diodes, operates within -55°C to +150°C, and supports 100% UIS testing.
Feature Summary
- High conversion efficiency with minimized on-state losses
- Fast switching speed and low input capacitance
- ESD protected gate structure
- 100% unclamped inductive switching (UIS) tested
Applications
- High frequency switching
- Synchronous rectification
- DC-DC converters
Procurement Notes
Verify the specific suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the ordering part number matches the exact datasheet revision DS42148 Rev. 2 for accurate electrical specifications.
Selection Notes
Select this component for applications requiring high efficiency power management where low on-state resistance is critical. The SO-8 package provides a compact footprint suitable for surface mount assembly. Consider the thermal resistance characteristics when designing heat dissipation strategies for continuous operation.
Part Context
This part belongs to the DMT64M8LSS series from Diodes Incorporated. It is designed as a single N-channel enhancement mode MOSFET. The product line focuses on minimizing on-state resistance while maintaining superior switching performance for modern power management systems.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without design modification.
