DMT67M8LCG-7

$0.34

Description：MOSFET N-CH 60V 16A/64.6A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:73c55cc309d1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 16A/64.6A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 64.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMT67M8LCG-7

Overview

The DMT67M8LCG-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage of 60V, a maximum continuous drain current of 16A at +25°C ambient temperature, and a static drain-source on-resistance of 5.7mΩ at VGS=10V. The device supports an operating junction temperature range from -55°C to +150°C with a total power dissipation of 0.9W.

Feature Summary

Designed to minimize on-state losses while maintaining superior switching performance
Features ESD protected gate for enhanced reliability
Compliant with RoHS directives and halogen-free standards

Applications

Notebook battery power management
Load switch applications
Synchronous rectifier circuits
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental compliance standards, specifically RoHS and lead-free specifications, as indicated in the manufacturer's documentation. Ensure the V-DFN3333-8 package type aligns with the intended PCB footprint design.

Selection Notes

Select this component for applications requiring low on-resistance and fast switching speeds within a 60V system. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the gate threshold voltage and charge requirements match the driving circuit capabilities for optimal efficiency.

Part Context

This part belongs to the DMT67M8LCG series of N-channel enhancement mode MOSFETs. It is designed for high-efficiency power management applications. The device incorporates advanced silicon technology to achieve low conduction losses and robust switching performance suitable for modern electronic systems.

Replacement Considerations

Consult official datasheets for compatible alternatives within the same product family or similar specifications. Verify pinout compatibility and electrical parameter equivalence before substitution.