DMT67M8LSS-13

$1.09

Description：MOSFET BVDSS: 41V~60V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5b974e26e51c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.6mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT67M8LSS-13

Overview

The DMT67M8LSS-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 14.8A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 6.6mΩ at VGS=10V and 8.4mΩ at VGS=4.5V. Total gate charge (Qg) is 37.5nC at VGS=10V. It operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

Designed for high efficiency power management with minimized on-state resistance and superior switching performance.
Features ESD protected gate and fast switching speed capabilities.
Includes 100% Unclamped Inductive Switching (UIS) test verification in production.

Applications

Synchronous Rectifier
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free as specified in the manufacturer's documentation. Ensure compatibility with standard surface mount assembly processes.

Selection Notes

Select this component for applications requiring a 60V rating with high current handling up to 14.8A. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the gate threshold voltage requirements against the driving circuit capabilities to ensure reliable turn-on at both 4.5V and 10V logic levels.

Part Context

This part belongs to the DMT67M8LSS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in a standard SO-8 case. The product line focuses on providing robust performance for power management circuits while maintaining environmental compliance through lead-free manufacturing.