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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V V-DFN3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14.6A (Ta), 52.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.3mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1406 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.37W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：V-DFN3333-8 (Type B)
- Package / Case：8-PowerVDFN
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Overview
The DMT69M5LCG-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3333-8 package and operates with a drain-source voltage of 60V. The device provides a maximum on-resistance of 8.3mΩ at VGS=10V and 12.5mΩ at VGS=4.5V. Continuous drain current reaches 52.1A at TC=+25°C, while the total power dissipation is rated at 1.37W at TA=+25°C. The component supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed for high conversion efficiency and minimized on-state losses through low RDS(ON).
- Features fast switching speed and low input capacitance for superior dynamic performance.
- Manufactured as a totally lead-free and fully RoHS compliant green device.
Applications
- Notebook battery power management
- Load switch applications
- Synchronous rectifier circuits
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the V-DFN3333-8 (Type B) case material meets the required UL flammability classification rating of 94V-0 for the target assembly process. Ensure compliance with J-STD-020 moisture sensitivity level 1 requirements during storage and handling.
Selection Notes
Select this component when a compact V-DFN3333-8 footprint is required for 60V N-channel switching. Evaluate thermal resistance parameters against the specific PCB copper area available, as power dissipation ratings vary significantly based on mounting conditions. Consider the gate threshold voltage characteristics for compatibility with the intended logic-level drive signals.
Part Context
This part belongs to the Diodes Incorporated DMT series of N-channel enhancement mode MOSFETs. It utilizes silicon technology within a molded plastic V-DFN3333-8 case. The product line emphasizes minimizing on-resistance while maintaining robust switching performance for portable electronic power management solutions.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching voltage, current, and package specifications.
