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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14.8A (Ta), 40.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.3mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1406 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.74W (Ta), 20.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMT69M5LFVW-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package and features a maximum drain-source on-resistance of 8.3mΩ at VGS=10V and 12.5mΩ at VGS=4.5V. The device supports a continuous drain current of 40.6A at TC=+25°C and includes an integrated body diode with a forward voltage of 1.2V max. Key electrical parameters include a gate threshold voltage range of 1.4V to 2.5V, total gate charge of 28.4nC at VGS=10V, and a junction-to-case thermal resistance of 6.1°C/W.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
- Low on-resistance optimized for high-efficiency power management applications
- Small form factor thermally efficient package enables higher density end products
- Wettable flank design facilitates improved optical inspection
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify that the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure the component meets automotive quality standards if AEC-Q100/101 qualification or PPAP capability is required for the intended application environment.
Selection Notes
Select this component when a compact surface-mount solution is needed for 60V switching applications requiring low conduction losses. The PowerDI3333-8 package offers a balance between thermal performance and board space efficiency. Consider the gate threshold voltage characteristics and total gate charge values to ensure compatibility with the driving circuitry and desired switching speeds within the target power management topology.
Part Context
This part belongs to the DMT69 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management solutions, leveraging advanced silicon technology to deliver robust electrical characteristics within small footprint packages suitable for modern electronic designs.
Replacement Considerations
The datasheet lists DMT69M5LFVW-7 as an equivalent part number differing only in packaging quantity (2000 units per reel). Verify pinout compatibility and electrical parameter equivalence before substituting with other manufacturers' components.
