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The DMT8003SPSWQ-13 is a single N-channel MOSFET manufactured by Diodes Incorporated, designed for surface-mount applications. It features an 80 V drain-source voltage rating and supports a continuous drain current of 100 A at case temperature. The device exhibits a maximum on-resistance of 3.9 mΩ at 10 V gate drive. Packaged in a PowerDI5060-8 (UX class) footprint with wettable flanks, it ensures reliable solder joints. The component operates within a junction temperature range of -55°C to +175°C and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status against the official datasheet. Confirm the PowerDI5060-8 UX package type matches the design requirements for wettable flank visibility. Ensure the operating environment aligns with the specified temperature ranges and current ratings provided in the manufacturer's documentation.
Select this component when automotive reliability and high current handling are required in a small form factor. The 80V rating suits 12V or 24V automotive systems. Compare the 3.9mΩ on-resistance against alternative packages to balance conduction losses with thermal constraints. Verify that the PCB layout supports the PowerDI5060-8 thermal pad requirements for optimal heat dissipation.
This part belongs to the DMT series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in the PowerDI5060-8 package. The series is engineered for high-efficiency power management solutions, offering a balance of low resistance and robust packaging for demanding electronic environments.
Check for DMT8003SPS-13 as a potential non-automotive equivalent. Verify if the absence of the 'Q' suffix affects automotive compliance needs. Ensure pinout and thermal characteristics remain compatible before substitution.