DMT8007LPSW-13

$1.37

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:950be0e3ebf5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：45.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2682 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMT8007LPSW-13

Overview

The DMT8007LPSW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 80V and a maximum gate-source voltage (VGSS) of ±20V. At TC = +25°C, the static drain-source on-resistance (RDS(ON)) is typically 6.5mΩ at VGS = 10V with ID = 14A, and 9.5mΩ at VGS = 4.5V with ID = 12A. The continuous drain current reaches 100A at VGS = 10V under steady-state conditions at +25°C. The device supports a pulsed drain current of 400A.

Feature Summary

Features 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application reliability.
Designed to minimize RDS(ON) while maintaining superior switching performance for high conversion efficiency.
Constructed with lead-free finish, RoHS compliant materials, and is halogen and antimony free.

Applications

DC-DC converters
Load switches
Power management circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the official datasheet. Confirm that the component meets the required environmental standards, including RoHS compliance and Halogen/Antimony-free specifications, before finalizing procurement orders.

Selection Notes

Select this component when an 80V rating is sufficient for the application, offering lower cost compared to higher voltage alternatives. Ensure the thermal design accommodates the junction-to-ambient resistance values provided for FR-4 substrates. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.

Part Context

This part belongs to the DMTH/DMT series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package, which provides a compact footprint suitable for dense PCB layouts. The series is engineered for general-purpose power switching applications requiring low conduction losses.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing should strictly adhere to electrical parameters such as BVDSS, RDS(ON), and package dimensions to ensure functional compatibility without modification.