DMT8008SPS-13

$0.32

Description：MOSFET N-CH 80V 83A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7fe3dbe27b54 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 83A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT8008SPS-13

Overview

The DMT8008SPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source voltage rating and a maximum continuous drain current of 83A at TC = +25°C. The device achieves a low on-resistance of 7.8mΩ at VGS = 10V and 11mΩ at VGS = 6V. Key dynamic characteristics include a total gate charge of 26nC at VGS = 6V and switching times with turn-on delay of 8ns and fall time of 21ns.

Feature Summary

Designed to minimize on-state losses while maintaining superior switching performance for high-conversion efficiency.
Manufactured with lead-free finish and complies with RoHS directives; halogen and antimony free.
Features a molded plastic green molding compound with UL flammability classification rating 94V-0.
Undergoes 100% unclamped inductive switching (UIS) testing in production to ensure robust end applications.

Applications

DC-DC converters
Load switches
Power management circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen/antimony-free status. Ensure the selected part matches the PowerDI5060-8 package dimensions and pinout for proper PCB integration.

Selection Notes

Select this component when an 80V N-channel MOSFET with high current handling capability is required. The low RDS(ON) makes it suitable for minimizing conduction losses in power management applications. Consider the thermal resistance values and junction temperature limits to ensure adequate heat dissipation within the specified operating range.

Part Context

This device belongs to the DMT series of N-channel enhancement mode MOSFETs by Diodes Incorporated. It utilizes silicon technology and is designed for surface mount installation. The PowerDI5060-8 package provides a compact footprint with efficient thermal performance for modern electronic designs.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters, package type, and thermal characteristics to ensure functional compatibility.