DMT8020LDG-13

Overview

The DMT8020LDG is an 80V symmetric dual N-channel MOSFET in a PowerDI3333-8 package. It features two independent channels with a maximum drain-source voltage of 80V and a gate-source voltage rating of ±20V. At VGS=10V, the on-resistance is typically 20mΩ with a continuous drain current of 6.7A. At VGS=4.5V, the resistance is typically 30mΩ with a current of 5.8A. The device supports a pulsed drain current of 66A and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Symmetric dual N-channel configuration for balanced power management applications
• Optimized low on-state resistance combined with fast switching speed
• Validated robustness through 100% unclamped inductive switching testing

Applications

• High-efficiency power-management functions
• DC/DC converter circuits
• Motor control systems

Procurement Notes

Verify the specific ordering suffix '-13' indicates a 3000-unit tape and reel carrier quantity. Confirm that the component meets RoHS directives and is halogen and antimony free. Ensure the selected part number matches the required packaging format for automated assembly processes.

Selection Notes

Select this component when a compact dual MOSFET solution is required for space-constrained designs. The PowerDI3333-8 package provides efficient thermal dissipation for high-density layouts. Evaluate the 80V breakdown voltage against system peak transient requirements to ensure adequate safety margins.

Part Context

This device belongs to Diodes Incorporated's PowerDI series of surface-mount power transistors. The PowerDI3333-8 package utilizes a molded plastic compound with a copper lead frame. It is designed to replace discrete dual MOSFET arrangements while reducing board space and parasitic inductance.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on package similarity or generic electrical ratings.