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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V U-DFN2020
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT8030LFDF-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 7.5A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 25mΩ at VGS=10V and 38mΩ at VGS=4.5V. Key electrical parameters include a gate-source voltage rating of ±20V, a total gate charge (Qg) of 10.4nC at VGS=10V, and a thermal resistance (RθJA) of 103°C/W on a minimum pad layout.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features a 0.6mm profile ideal for low-profile applications with a compact PCB footprint of 4mm².
- Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Applications
- Power-management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process. Ensure the procurement channel is authorized to guarantee product authenticity and traceability according to Diodes Incorporated policies.
Selection Notes
Select this component when an 80V N-channel MOSFET with a 2020 footprint is required for space-constrained designs. Consider the RDS(ON) values at both 10V and 4.5V gate drive levels to ensure compatibility with the system's logic or driver voltage. Evaluate the thermal resistance and power dissipation limits against the expected operating junction temperature and ambient conditions.
Part Context
This part belongs to Diodes Incorporated's new generation MOSFET lineup, specifically engineered to balance low conduction losses with fast switching characteristics. It utilizes silicon technology within a molded plastic U-DFN2020-6 package, designed for surface mount applications requiring robust performance in compact electronic assemblies.
Replacement Considerations
Consult the official datasheet for equivalent circuit diagrams and pinout configurations when evaluating substitutes. Verify that any replacement part matches the 80V BVDSS, 7.5A ID, and U-DFN2020-6 package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB footprint.
FAQ
What is the maximum pulsed drain current for the DMT8030LFDF-13?
The maximum pulsed drain current (IDM) is 40A, specified with a 10µs pulse duration and a 1% duty cycle.
Does the DMT8030LFDF-13 support automotive applications?
For automotive applications requiring specific change control, AEC-Q qualification, PPAP capability, and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly or their local representative.
