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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V U-DFN2020
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMT8030LFDF-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 7.5A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 25mΩ at VGS = 10V and 38mΩ at VGS = 4.5V. It is housed in a U-DFN2020-6 package with a profile of 0.6mm, suitable for surface mount applications.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features a 0.6mm profile and a compact PCB footprint of 4mm², making it ideal for low-profile applications.
- Totally lead-free and fully RoHS compliant, also halogen and antimony free.
Applications
- Power-management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen/antimony-free status, as specified by the manufacturer's quality definitions before finalizing procurement specifications.
Selection Notes
Select this component based on its 80V rating and 7.5A continuous current capability. Consider the thermal characteristics, specifically the junction-to-ambient resistance, relative to the expected operating temperature range of -55°C to +150°C. Ensure the gate drive voltage aligns with the RDS(ON) specifications provided for optimal efficiency.
Part Context
This part belongs to the DMT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in a U-DFN2020-6 (Type F) configuration. The device is designed for general-purpose switching applications requiring low on-resistance and robust thermal performance within a small form factor.
Replacement Considerations
Consult official Diodes Incorporated documentation or contact local representatives for confirmed substitute part numbers. Verify pinout compatibility, electrical ratings, and package dimensions before substituting any component in an existing design.
