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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：166A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：85 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5542 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta), 167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type Q)
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H003SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 3mΩ at VGS=10V and 5mΩ at VGS=6V, supporting continuous drain currents of 166A at TC=25°C and 117A at TC=100°C. Packaged in a PowerDI5060-8/SWP (Type Q) surface-mount format, it includes wettable flanks for inspection.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features wettable flanks for improved optical inspection
- Undergoes 100% unclamped inductive switching testing
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the 'Type Q' package variant with wettable flanks matches the design requirements for automated optical inspection processes. Ensure compliance with RoHS and halogen-free specifications if required by the target application standards.
Selection Notes
Select this component when high-efficiency power management requires low on-state resistance combined with robust switching performance. The wide operating temperature range makes it suitable for high ambient environments. Verify that the gate threshold voltage and total gate charge align with the driving circuit capabilities for optimal switching efficiency.
Part Context
This part belongs to the DMTH10H series of automotive-grade MOSFETs designed for high-current applications. It utilizes the PowerDI5060-8/SWP package to provide a compact footprint with enhanced thermal dissipation capabilities compared to standard packages. The series emphasizes reliability through rigorous UIS testing and green manufacturing processes.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should strictly match the PowerDI5060-8/SWP package type, 100V rating, and wettable flank specifications.
