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Product Detailed Parameters
- Description：MOSFET N-CH 100V 140A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3688 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：187W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The DMTH10H005LCT is a 100V N-channel enhancement mode MOSFET in a TO-220AB package. It features a maximum drain-source on-resistance of 5mΩ at VGS=10V and a continuous drain current of 140A at TC=+25°C. The device supports an operating junction temperature up to +175°C, with a total power dissipation of 166W at TA=+25°C and a thermal resistance from junction to case of 0.8°C/W.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Guaranteed 100% unclamped inductive switching capability for robust end applications
- Low input capacitance and low input/output leakage characteristics
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific datasheet revision (DS38718 Rev. 4 - 2) against your design requirements. Confirm that the TO-220AB through-hole packaging aligns with your board layout constraints. Ensure thermal management solutions account for the specified junction-to-case thermal resistance during high-current operation.
Selection Notes
Select this component for designs requiring high-efficiency power management with significant current handling capabilities. The low on-resistance minimizes conduction losses, while the fast switching characteristics support efficient DC-DC converter topologies. Verify gate drive voltage compatibility with the specified threshold and on-resistance test conditions.
Part Context
This part belongs to Diodes Incorporated's DMTH10H series of high-performance N-channel MOSFETs. These devices are engineered for high-efficiency power management applications, combining low on-resistance with fast switching speeds. The series utilizes advanced silicon technology to achieve superior thermal performance and reliability in demanding electronic systems.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching critical parameters such as BVDSS, RDS(ON), ID, and package type to ensure functional compatibility within the target circuit design.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 140A when measured at a case temperature of +25°C.
Is the device suitable for high-temperature environments?
Yes, the device is rated to operate at junction temperatures up to +175°C, making it ideal for high ambient temperature environments.
Does the MOSFET support unclamped inductive switching?
Yes, the device guarantees 100% unclamped inductive switching to ensure more reliable and robust end applications.
