DMTH10H009SPSQ-13

DMTH10H009SPSQ-13

$0.38
  • Description:MOSFET BVDSS: 61V~100V POWERDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:30395d05e858 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 61V~100V POWERDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:14A (Ta), 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:8.9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2085 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):1.6W (Ta), 100W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerDI5060-8
  • Package / Case:8-PowerTDFN

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DMTH10H009SPSQ-13

Overview

The DMTH10H009SPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and an 8.9mΩ maximum on-resistance at VGS=10V. The device supports continuous drain currents of up to 86A at case temperature of +25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 surface-mount footprint, it offers low thermal resistance and high conversion efficiency for power management applications.

Feature Summary

  • Qualified to AEC-Q101 standards with PPAP capability for automotive environments
  • Rated for operation up to +175°C junction temperature
  • 100% unclamped inductive switching (UIS) tested in production
  • Thermally efficient package design for cooler running applications

Applications

  • Motor controls
  • DC-DC converters
  • Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance and Halogen/Antimony-free requirements if environmental specifications are mandatory for the target assembly process.

Selection Notes

Select this component when designing circuits requiring robust performance in high ambient temperatures or demanding automotive environments. The low on-resistance minimizes conduction losses, while the fast switching characteristics support efficient power conversion. Ensure the PCB layout accommodates the exposed drain pad for optimal thermal dissipation given the package constraints.

Part Context

This part belongs to the DMTH10 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package, which provides a compact form factor with a profile under 1.1mm. The series is engineered to balance high current handling capabilities with low thermal resistance, making it suitable for space-constrained power electronics designs.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same family. Verify that any substitute maintains the required 100V breakdown voltage and meets the specific AEC-Q101 qualification status if automotive reliability is a strict requirement.

DMTH10H009SPSQ-13DMTH10H009SPSQ-13
$0.38
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