DMTH10H010SPS-13

$1.07

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:adf67ef3774c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：11.8A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：56.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4468 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH10H010SPS-13

Overview

The DMTH10H010SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 8.8mΩ at VGS=10V and 11.5mΩ at VGS=6V, with a continuous drain current capability of 100A at TC=25°C. Packaged in a PowerDI5060-8 surface-mount format, it includes an internal body diode with a forward voltage of 1.3V max.

Feature Summary

Rated for operation up to +175°C junction temperature
Guaranteed 100% unclamped inductive switching capability
Qualified to AEC-Q101 automotive reliability standards

Applications

Motor control systems
DC-DC converters
Power management circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance requirements and ensure the application environment supports the specified thermal characteristics for the PowerDI5060-8 package.

Selection Notes

Select this component when high ambient temperatures require a +175°C rating. Ensure the gate drive voltage aligns with the specified RDS(ON) thresholds at 6V or 10V. Verify that the PCB layout accommodates the exposed drain pad for optimal thermal dissipation from junction to case.

Part Context

This part belongs to the DMTH10H010 series of N-channel MOSFETs designed for low on-resistance and superior switching performance. It utilizes the PowerDI5060-8 package, which integrates multiple drain connections to minimize thermal resistance and improve power handling capabilities compared to standard discrete packages.