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Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：11.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4468 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 166W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H010SPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and an 8.8mΩ maximum on-resistance at VGS=10V. The device supports a continuous drain current of 100A at case temperature of +25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 surface-mount format, it includes an exposed drain pad for thermal management.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation up to +175°C junction temperature
- Features 100% unclamped inductive switching testing for robustness
- Utilizes low RDS(ON) technology to minimize conduction losses
Applications
- Motor controls
- DC-DC converters
- Power managements
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance requirements and ensure the procurement channel is authorized to guarantee product authenticity and traceability for IATF 16949 certified manufacturing origins.
Selection Notes
Select this component when high ambient temperature resilience is required due to its +175°C rating. The PowerDI5060-8 package offers a compact footprint suitable for space-constrained designs while providing significant current handling capabilities. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMTH10 series of automotive-grade MOSFETs from Diodes Incorporated. It is designed specifically for environments requiring strict change control and reliability. The device utilizes silicon technology and is housed in a molded plastic PowerDI package with matte tin terminal finishes, distinguishing it from through-hole or standard SO-8 variants.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Direct replacements must match the 100V BVDSS, PowerDI5060-8 package dimensions, and AEC-Q101 qualification status to ensure mechanical and electrical compatibility without redesigning the PCB layout.
