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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2343 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH10H015SK3-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK) package. It features a drain-source voltage rating of 100V and a continuous drain current of 59A at TC = +25°C. The device offers a maximum on-resistance of 14mΩ at VGS = 10V and 20A, or 20mΩ at VGS = 6V and 20A. Total gate charge is typically 30.1nC at VGS = 10V. It supports an operating junction temperature range from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Features 100% unclamped inductive switching testing for robust end applications
- Low on-resistance minimizes conduction power losses
- Low gate charge reduces switching losses
Applications
- Power-management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets RoHS directives and is halogen and antimony-free as defined by the manufacturer's green product standards. Ensure the application environment does not exceed the specified thermal resistance limits for the chosen mounting conditions.
Selection Notes
Select this component when a 100V N-channel MOSFET with low RDS(ON) is required for efficient power management. Consider the TO252 package size for board space constraints. Evaluate the thermal performance based on the specific PCB copper area and heat sinking capabilities, as power dissipation varies significantly between free-air and case-mounted conditions.
Part Context
This part belongs to the DMTH series of automotive-grade compliant MOSFETs designed for high reliability. It utilizes silicon technology and is packaged in a molded plastic TO252 housing with matte tin annealed terminals over a copper leadframe. The device is intended for use in demanding electronic systems requiring robust switching performance.
Replacement Considerations
The automotive-compliant variant DMTH10H015SK3Q is available under a separate datasheet. Verify pinout compatibility and electrical specifications before substituting with other 100V N-channel MOSFETs in the TO252 package.
