DMTH10H015SPSQ-13

$0.43

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:10752347aca4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：8.4A (Ta), 50.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2343 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 55W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH10H015SPSQ-13

Overview

The DMTH10H015SPSQ is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 100V and operates up to a junction temperature of +175°C. The device offers low on-resistance, rated at 14.5mΩ maximum at VGS=10V and 20A, or 19.5mΩ at VGS=6V and 20A. Continuous drain current reaches 56A at TC=+25°C. Packaged in a thermally efficient PowerDI5060-8, it supports high ambient temperature environments with fast switching speeds.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Thermally efficient package design for cooler running applications
Low input capacitance and fast switching speed

Applications

Motor control
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix '-13' when sourcing components to ensure correct tape and reel packaging quantities. Confirm that the required part matches the exact datasheet revision number DS39955 Rev. 5. Ensure compliance with AEC-Q101 qualification standards if the application demands automotive-grade reliability and PPAP documentation.

Selection Notes

Select this component for designs requiring robust performance in high ambient temperatures. The low RDS(ON) minimizes conduction losses, while the PowerDI5060-8 package provides excellent thermal dissipation. Consider the gate threshold voltage range when designing drive circuits to ensure reliable turn-on across the full operating temperature spectrum.

Part Context

This MOSFET belongs to Diodes Incorporated's DMTH10 series, specifically engineered for automotive use. It is manufactured in IATF 16949 certified facilities and meets stringent automotive quality requirements. The device utilizes silicon technology within a molded plastic 'Green' compound package that is halogen- and antimony-free.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching BVDSS, RDS(ON), package type, and thermal characteristics. Verify compatibility with existing PCB footprints and drive circuitry before implementation.