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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V-100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：9.3A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1477 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H025LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 100 V and operates within a junction temperature range of -55 °C to +175 °C. The device utilizes the PowerDI5060-8 surface-mount package. At a case temperature of 25 °C, it supports a continuous drain current (I_D) of 45 A at V_GS = 10 V. The static drain-source on-resistance (R_DS(ON)) is rated at a maximum of 23 mΩ at V_GS = 10 V and 30 mΩ at V_GS = 6 V.
Feature Summary
- Rated for operation up to +175 °C junction temperature, suitable for high ambient environments.
- Guaranteed 100% unclamped inductive switching capability for robust end applications.
- Designed to minimize on-state losses while maintaining fast switching speeds.
Applications
- Synchronous rectifiers
- DC-DC converters
- Primary side switching
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2500 units per carrier. Confirm that the component meets RoHS directives and is halogen and antimony free. Ensure the application environment does not exceed the specified thermal limits or voltage ratings defined in the datasheet electrical characteristics.
Selection Notes
Select this component when a 100 V rating and low R_DS(ON) are required for power management circuits. Consider the PowerDI5060-8 package dimensions for PCB layout constraints. Evaluate the thermal resistance values against the expected heat dissipation requirements of the target synchronous rectifier or DC-DC converter design.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for notebook battery power management and load switch applications. The series emphasizes minimized on-resistance combined with superior switching performance capabilities.
Replacement Considerations
An automotive-compliant version of this component is available under the separate part number DMTH10H025LPSQ. Verify if the specific reliability standards required for the application necessitate the automotive-grade variant instead of the standard industrial grade part.
