DMTH10H032LFVWQ-7

$0.23

Description：MOSFET BVDSS: 61V~100V PowerDI33
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:e8b56af28c67 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V PowerDI33
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH10H032LFVWQ-7

Overview

The DMTH10H032LFVWQ-7 is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source on-resistance of 30mΩ at VGS=10V and 50mΩ at VGS=4.5V, supporting continuous drain currents of 26A at TC=+25°C and 21A at VGS=4.5V. The device operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI3333-8/SWP (Type UX) package.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Features wettable flank terminals to facilitate improved optical inspection
Includes 100% unclamped inductive switching (UIS) testing in production

Applications

Backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify that the specific suffix '-7' corresponds to the 2,000-unit tape and reel carrier configuration as defined in the ordering information. Confirm compliance with RoHS 3 and halogen-free requirements if environmental specifications are mandatory for the target assembly process.

Selection Notes

Select this component when high-density packaging and thermal efficiency are required for automotive-grade circuits. The small form factor supports higher density end products while maintaining robust UIS performance. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance characteristics.

Part Context

This part belongs to the DMTH10 series of N-channel MOSFETs manufactured by Diodes Incorporated. It is produced in IATF 16949 certified facilities and utilizes a molded plastic green molding compound with matte tin annealed over copper leadframe terminals.