DMTH10H032LPSWQ-13

$0.83

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:de7584085244 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3.4W (Ta), 68W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

Download product information

DMTH10H032LPSWQ-13

Overview

The DMTH10H032LPSWQ-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a gate-source voltage rating of ±20V. The device provides a continuous drain current of 33A at +25°C case temperature, with a pulsed drain current capability of 132A. Static drain-source on-resistance is specified as 32mΩ max at VGS=10V and 50mΩ max at VGS=4.5V. Total gate charge is 11.9nC at VGS=10V. Thermal resistance from junction to case is 2.2°C/W.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications with PPAP support.
Features wettable flank terminals to facilitate improved optical inspection.
Undergoes 100% unclamped inductive switching testing during production.
Constructed using lead-free finish materials that are halogen and antimony free.

Applications

Synchronous rectifiers
Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm compliance with RoHS 3 directives and REACH SVHC requirements prior to integration. Ensure design validation accounts for the IATF 16949 certified manufacturing environment required for automotive change control protocols.

Selection Notes

Select this component when designing systems requiring robust 100V switching capabilities within an automotive context. The PowerDI5060-8 package offers a balance between thermal performance and board space efficiency. Evaluate the 32mΩ on-resistance against system power loss constraints at the intended operating gate drive voltage.

Part Context

This part belongs to the DMTH10H series of high-performance N-channel MOSFETs designed specifically for demanding automotive environments. The series emphasizes reliability through rigorous qualification processes and specialized packaging technologies like wettable flanks. It serves as a critical switching element in power conversion stages where high voltage tolerance and thermal stability are mandatory.