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The DMTH10H032SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source breakdown voltage and a maximum on-resistance of 32mΩ at VGS=10V. The device supports a continuous drain current of 25A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 (SWP) Type UX format, it includes wettable flank terminals for improved optical inspection.
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration with a packing quantity of 2,500 units. Confirm that the package type matches the PowerDI5060-8 (SWP) (Type UX) specification. Ensure compliance requirements such as RoHS and Halogen-free status align with project specifications before finalizing procurement orders.
Select this component when a 100V rating and low RDS(ON) are required for synchronous rectification or DC-DC conversion. The PowerDI5060-8 package offers a compact footprint suitable for space-constrained designs. Consider the thermal characteristics and UIS capability if the application involves inductive load switching or requires high reliability under transient conditions.
This part belongs to the DMTH10 series of N-channel MOSFETs from Diodes Incorporated. The series focuses on high-efficiency power management solutions. The DMTH10H032SPSW variant specifically utilizes the PowerDI5060-8 package with wettable flank technology, distinguishing it from standard surface-mount packages by enhancing solder joint visibility and inspection quality.
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should strictly match the 100V rating, 32mΩ RDS(ON), and PowerDI5060-8 package dimensions to ensure mechanical and electrical compatibility without modification.
The maximum operating junction temperature is +175°C.
Yes, the device undergoes 100% Unclamped Inductive Switching (UIS) testing in production to ensure reliability.