DMTH10H032SPSW-13

DMTH10H032SPSW-13

$0.21
  • Description:MOSFET BVDSS: 61V~100V PowerDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk

SKU:356e36a512b3 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 61V~100V PowerDI50
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:32mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:544 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):3.2W (Ta)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI5060-8 (Type UX)
  • Package / Case:8-PowerTDFN

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DMTH10H032SPSW-13

Overview

The DMTH10H032SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source breakdown voltage and a maximum on-resistance of 32mΩ at VGS=10V. The device supports a continuous drain current of 25A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 (SWP) Type UX format, it includes wettable flank terminals for improved optical inspection.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
  • Features wettable flank terminals to facilitate improved optical inspection during manufacturing.
  • Undergoes 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application reliability.

Applications

  • Synchronous rectifiers
  • Backlighting systems
  • Power management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration with a packing quantity of 2,500 units. Confirm that the package type matches the PowerDI5060-8 (SWP) (Type UX) specification. Ensure compliance requirements such as RoHS and Halogen-free status align with project specifications before finalizing procurement orders.

Selection Notes

Select this component when a 100V rating and low RDS(ON) are required for synchronous rectification or DC-DC conversion. The PowerDI5060-8 package offers a compact footprint suitable for space-constrained designs. Consider the thermal characteristics and UIS capability if the application involves inductive load switching or requires high reliability under transient conditions.

Part Context

This part belongs to the DMTH10 series of N-channel MOSFETs from Diodes Incorporated. The series focuses on high-efficiency power management solutions. The DMTH10H032SPSW variant specifically utilizes the PowerDI5060-8 package with wettable flank technology, distinguishing it from standard surface-mount packages by enhancing solder joint visibility and inspection quality.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should strictly match the 100V rating, 32mΩ RDS(ON), and PowerDI5060-8 package dimensions to ensure mechanical and electrical compatibility without modification.

FAQ

What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature is +175°C.

Does this component support Unclamped Inductive Switching?

Yes, the device undergoes 100% Unclamped Inductive Switching (UIS) testing in production to ensure reliability.

DMTH10H032SPSW-13DMTH10H032SPSW-13
$0.21
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