DMTH10H032SPSWQ-13

$0.77

Description：MOSFET BVDSS: 61V~100V PowerDI50
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:addc917b59fb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V PowerDI50
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：544 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 38W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H032SPSWQ-13

Overview

The DMTH10H032SPSWQ-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 100V and a static drain-source on-resistance of 32mΩ at VGS=10V. The device supports a continuous drain current of 25A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8/SWP (Type UX) footprint, it includes wettable flank terminals for improved optical inspection.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Features wettable flank terminals to facilitate improved optical inspection
Manufactured in IATF 16949 certified facilities with specific change control suitability
Includes 100% unclamped inductive switching (UIS) testing in production

Applications

Synchronous rectifiers
Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the complete part number including the ordering suffix '-13' to confirm the tape and reel packaging quantity of 2,500 units. Ensure the design utilizes the specified PowerDI5060-8/SWP footprint dimensions. Confirm that the application environment meets the required thermal management specifications for the package type.

Selection Notes

Select this component when an AEC-Q101 qualified N-channel MOSFET is required for automotive-grade designs. The 100V rating and low on-resistance make it suitable for power management tasks. Verify that the PCB layout accommodates the exposed drain pad for optimal thermal dissipation and that the gate drive voltage aligns with the specified threshold characteristics.

Part Context

This device belongs to the DMTH10 series of high-performance MOSFETs from Diodes Incorporated. It is designed specifically to address the stringent reliability requirements of the automotive industry. The product integrates advanced silicon technology with a specialized surface-mount package to provide robust performance in compact electronic systems.