DMTH10H2M5STLW-13

$3.98

Description：MOSFET BVDSS: 61V~100V POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:12038ede04cc Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：215A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：124.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8450 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：5.8W (Ta), 230.8W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI1012-8
Package / Case：8-PowerSFN

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DMTH10H2M5STLW-13

Overview

The DMTH10H2M5STLW-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the POWERDI1012-8 (TOLL) surface-mount package and features a maximum drain-source on-resistance of 2.2mΩ at VGS=10V. The device supports a continuous drain current of 229A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features wettable flanks to facilitate improved optical inspection during assembly
Manufactured using lead-free, halogen-free, and antimony-free materials

Applications

Motor control systems
DC-DC converters
Power management circuits

Procurement Notes

Verify that the specific part number matches the required commercial grade specifications. Confirm the tape and reel packaging quantity aligns with production requirements. Ensure the ordering suffix corresponds to the correct carrier type before finalizing procurement orders.

Selection Notes

Select this component when low on-state losses are critical for power efficiency. Consider the TOLL package profile for applications requiring superior thermal dissipation compared to traditional packages. Evaluate the gate charge parameters against available driver capabilities to ensure optimal switching performance.

Part Context

This device belongs to the DMTH10 series of high-current MOSFETs designed for automotive and industrial power applications. It represents a newer generation optimized to minimize resistance while maintaining robust switching characteristics suitable for demanding electrical loads.