DMTH10H2M8LPSW-13

$0.82

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:440c4fcbd1ae Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：164A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：116 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6239 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：4W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H2M8LPSW-13

Overview

The DMTH10H2M8LPSW-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 2.8mΩ at VGS=10V and 4.2mΩ at VGS=4.5V, supporting continuous drain currents of 164A at TC=+25°C and 116A at TC=+100°C. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 150W at TC=+25°C.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Wettable flank design facilitates improved optical inspection

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the PowerDI5060-8/SWP package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-case resistance values under actual operating conditions.

Selection Notes

Select this component when high-efficiency power management requires low on-state losses combined with robust switching performance. The wide operating temperature range makes it suitable for environments with high ambient heat. Verify gate drive voltage compatibility with the specified threshold characteristics for optimal conduction.

Part Context

This part belongs to Diodes Incorporated's DMTH series of high-performance N-channel MOSFETs. These devices utilize silicon technology to deliver superior electrical characteristics within compact surface-mount packages designed for automated assembly processes.