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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4327 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：4.7W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H4M6SPSWQ is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 100V and a low on-resistance (RDS(ON)) of 4.9mΩ at VGS=10V. The device supports a continuous drain current (ID) of 115A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in PowerDI® 5060-8/SWP, it meets AEC-Q101 standards.
Feature Summary
- Qualified to AEC-Q101 with PPAP capability for automotive use
- 100% Unclamped Inductive Switching (UIS) tested in production
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Motor controls
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets the required IATF16949 manufacturing facility standards for automotive change control. Ensure compatibility with the specified PowerDI5060-8/SWP package dimensions during PCB layout.
Selection Notes
Select this component for high-efficiency power switching where low conduction losses are critical. The wide operating temperature range up to +175°C allows for robust thermal performance in demanding environments. Verify gate drive requirements against the specified threshold voltage and total gate charge characteristics.
Part Context
This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes silicon technology housed in a compact PowerDI® package. The device integrates an internal body diode and is optimized for fast switching speeds and high conversion efficiency in DC-DC applications.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching BVDSS, RDS(ON), ID ratings, and package footprint. Ensure any replacement maintains AEC-Q101 qualification if used in automotive contexts.
