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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V TO252 T&
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3142 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The DMTH12H007SK3-13 is a 120V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an 8.9mΩ maximum on-resistance at VGS=10V and supports continuous drain currents of 86A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 3.3W in a TO252 (DPAK) package.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Low gate charge minimizes switching losses
Applications
- Power management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS directives and Halogen/Antimony-free requirements if environmental compliance is required for the target assembly process.
Selection Notes
Select this component when high-efficiency power management requires low conduction losses and fast switching capabilities. The wide operating temperature range makes it suitable for environments with high ambient heat. Ensure the application voltage does not exceed the 120V drain-source breakdown rating.
Part Context
This part belongs to the DMTH series of advanced N-channel MOSFETs from Diodes Incorporated. It utilizes a TO252 (DPAK) surface-mount package designed for efficient thermal dissipation through the exposed drain pad. The product represents a newer generation of silicon technology focused on minimizing both static and dynamic power losses.
Replacement Considerations
Consult official Diodes Incorporated documentation or authorized distributors for verified equivalent part numbers. Do not substitute based solely on generic electrical parameters without confirming pinout compatibility and package dimensions.
