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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V PowerDI5
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3142 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：3.5W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH12H007SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 120V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI5060-8 package, which has a profile under 1.1mm. Key electrical parameters include a maximum on-resistance of 8.9mΩ at VGS=10V and 16mΩ at VGS=6V. Continuous drain current ratings are 84A at TC=+25°C and 60A at TC=+100°C.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Thermally efficient PowerDI5060-8 package design
- Lead-free finish with RoHS compliance
Applications
- Switching applications
- DC-DC converters
- High efficiency power management systems
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all applicable environmental directives relevant to your region. Ensure that the manufacturing facility complies with necessary quality standards if automotive or high-reliability specifications are required for the end application.
Selection Notes
Select this component when designing circuits requiring low on-state resistance and robust switching performance in compact form factors. Consider the thermal characteristics and package limitations when determining heat dissipation requirements. Evaluate the gate threshold voltage and total gate charge against the driving circuit capabilities to ensure optimal switching efficiency.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state losses while maintaining superior switching performance. The product is qualified to JEDEC standards for high reliability and is intended for use in environments demanding high ambient temperature tolerance.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and thermal resistance values when substituting with other MOSFETs in the same package family.
