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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V POWERDI5
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3369 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 107W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH15H017LPSWQ-13 is a 150V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 17.5mΩ at VGS=10V and 25.5mΩ at VGS=4.5V, supporting continuous drain currents up to 50A at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C and includes AEC-Q101 qualification for automotive reliability.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Manufactured with thermally efficient packaging for cooler running applications
- Includes 100% unclamped inductive switching (UIS) testing for robustness
Applications
- Notebook battery power management
- Load switch circuits
- Synchronous rectification
- Class D audio amplifiers
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets the required AEC-Q101 qualification standards and IATF 16949 manufacturing facility requirements for your intended automotive application context.
Selection Notes
Select this component when designing systems requiring low on-state losses combined with fast switching speeds. Ensure the thermal design accommodates the specified thermal resistance values and that the gate drive voltage aligns with the threshold characteristics for optimal conduction efficiency.
Part Context
This part belongs to Diodes Incorporated's new generation N-channel MOSFET lineup designed to minimize RDS(ON) while maintaining superior switching performance. It utilizes the PowerDI® surface-mount technology to provide a compact solution suitable for thin electronic devices.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and electrical specifications.
